dr hab. Małgorzata Sznajder, prof. UR
- Jednostka:
Wydział Nauk Ścisłych i Technicznych, Instytut Nauk Fizycznych - Budynek: A0 (korytarz B1), ul. prof. Stanisława Pigonia 1
- Pokój: 311
- Nr telefonu: 17 851 8612
- e-mail: [email protected]
- ORCID: 0000-0003-4701-9991
- Konsultacje dla studentów: poniedziałek 13:00 - 13:45, czwartek 11:30 - 12:15
Informacje
Obszar badań obejmuje fizykę ciała stałego, w tym materiały półprzewodnikowe, kryształy warstwowe, jak i materiały azotkowe dla optoelektroniki i mikroelektroniki wysokich częstotliwości, mocy i temperatur. Badania naukowe obejmują: atomistyczne modelowanie ab-initio adsorpcji pierwiastków na powierzchniach, procesów rekonstrukcji, wzrostu cienkich warstw. Obliczenia ab-initio dyfuzji defektów punktowych na międzypowierzchniach, badanie heterostruktur półprzewodnikowych. Obliczenia z pierwszych zasad struktur pasmowych ciał krystalicznych, badanie roli symetrii i topologii w odzwierciedleniu własności fizycznych kryształów.
The research is focused on the condensed matter physics, including semiconductors, layered crystals, and nitrides applied in the opto- and microelectronics of high frequencies, power, and temperatures. Studies include ab initio atomistic modeling of adsorption processes on surfaces, reconstruction processes, investigations on semiconductor heterostructures, and the growth of thin films. First-principles calculations on the diffusion of point defects at interfaces, band structures of the crystalline materials, and investigations on the role of symmetry and topology in the reflection of selected physical properties of crystals.
Publikacje
- [współaut.] Hrytsak R, Kempisty P, Grzanka E Atomistic insights into defect migration in InxGa1-x N / GaN heterostructures : composition and temperature effects. - New Journal of Physics, 2025, Vol. 27, iss. 5
- [współaut.] Shpotyuk O, Lukáčová-Bujňákov&# Z, Kovalskiy A [et al.] Equimolar As4S4/Fe3O4 Nanocomposites Fabricated by Dry and Wet Mechanochemistry : Some Insights on the Magnetic-Fluorescent Functionalization of an Old Drug. - Materials, 2024, Vol. 17, iss. 8
- [współaut.] Zinchenko V, Volchak G, Chivireva N [et al.] Solidified Salt Melts of the NaCl-KCl-CeF3-EuF3 System as Promising Luminescent Materials. - Materials, 2024, Vol. 17, iss. 22
- [współaut.] Depciuch J, Czarny W, Płonka A [et al.] Investigation of novel methods for stress level measurements in athletes employing FTIR and Raman spectroscopy techniques. - Measurement, 2023, Vol. 220
- [współaut.] Hrytsak R, Kempisty P, Grzanka E [et al.] Modeling of the Point Defect Migration across the AlN/GaN Interfaces-Ab Initio Study. - Materials, 2022, Vol. 15, iss. 2
- [współaut.] Hrytsak R, Kempisty P, Leszczyński M Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system. - New Journal of Physics, 2022, Vol. 24
- [współaut.] Hrytsak R DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond-GaN Interfaces. - Materials, 2021, Vol. 14, iss. 21
- [współaut.] Hrytsak R, Kempisty P, Grzanka E [et al.] DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces. - Computational Materials Science, 2021, Vol. 186
- DFT-based modelling of carbon adsorption on the AlN surfaces and influence of point defects on the stability of diamond/AlN interfaces. - Diamond and Related Materials, 2020, vol. 103
- [współaut.] Babuka T, Gomonnai O, Glukhov K [et al.] Electronic and Optical Properties of the TlInS2 Crystal : Theoretical and Experimental Studies. - Acta Physica Polonica A, 2019, vol. 136, no. 4, s. 640-644
- [współaut.] Hrytsak R Ab initio studies of early stages of AlN growth process on the oxygen-terminated diamond (111) surface. - Diamond and Related Materials, 2018, vol. 83, s. 94-103
- [współaut.] Hrushka N, Grabowski M, Majewski J Comparative ab initio studies on morphology and stability of the C/BN and SiC/GaN heterostructure interfaces. - Materials Research Express, 2017, Vol. 4, iss. 4, Article Number: 045902
- [współaut.] Bercha S, Glukhov K, Kharkhalis L Construction of the Adiabatic Potential of a Symmetric Molecule in the Vicinity of Charged Semiconductor Surface. - Acta Physica Polonica A, 2016, Vol. 129, nr 1A, s. A120-122
- [współaut.] Grabowski M, Majewski J Morphology and Stability of the C/BN Interfaces : Ab Initio Studies. - Acta Physica Polonica A, 2016, Vol. 129, nr 1A, s. A138-141
- [współaut.] Hrushka N, Majewski J Morphology and Stability of the Diamond/BN (001) and (111) Interfaces Based on Ab Initio Studies. - Acta Physica Polonica A, 2016, Vol. 130, nr 5, s. 1220-1223
- [współaut.] Kharkhalis L, Glukhov K Electron-Deformational Phase Transitions in a TlGaSe2 Layered Crystal. - Acta Physica Polonica A, 2016, Vol. 129, nr 1A, s. A123-125
- [współaut.] Bercha D, Bercha S, Glukhov K Vibronic interaction in crystals with the Jahn-Teller centers in the elementary energy bands concept. - Condensed Matter Physics, 2015, Vol. 18, nr 3, Art. number 33705, 17 p.
- [współaut.] Bercha D, Bercha S, Glukhov K Electron-phonon interaction as a mechanism of phase transition in the CuInP2S6 crystal. - Acta Physica Polonica A, 2014, Vol. 126, nr 5, s. 1143-1145
- [współaut.] Kharkhalis L, Glukhov K Peculiarities of chemical bonding in crystals of the In-Se system. - Acta Physica Polonica A, 2014, Vol. 126, nr 5, s. 1146-1148
- [współaut.] Wachowicz E, Majewski J Ab initio studies of early stages of nitride growth process on silicon carbide. - Journal of Crystal Growth, 2014, Vol. 401, iss. 1, s. 25-29
- [współaut.] Jeong M, Lim Y, Seo W [et al.] Condenson-related thermoelectric properties and formation of coherent nanoinclusions in Te-substituted In4Se3 compounds. - Journal of Materials Chemistry A, 2013, Vol. 1, iss. 48, s. 15342-15347
- [współaut.] Lim Y, Jeong M, Lee J [et al.] Condenson state and its effects on thermoelectric properties in In4Se3. - Journal of Physics D. Applied Physics, 2013, Vol. 46, iss. 27, Article Number: 275304
- [współaut.] Majewski J Structure and charge compensation of heteropolar SiC/GaN interfaces. - Acta Physica Polonica A, 2013, vol. 124, nr 5, s. 772-774
- [współaut.] Wachowicz E, Kedron N, Majewski J Ab initio studies of early stages of AlN and GaN growth on 4H-SiC W: Physics of semiconduction / edited by: T. Ihn, C. Rossler, A. Kozikov. Melville, American Institute of Physics: 2013, S. 55-56
- [współaut.] Lim Y, Glukhov K, Kharkhalis L [et al.] Parameters of an Unique Condenson State in the Structure of the In4Se3 Crystal. - Acta Physica Polonica A, 2012, Vol. 122, iss. 6, s. 1115-1117
- [współaut.] Wachowicz E, Majewski J Ab Initio Studies of Al and Ga Adsorption on 4H-SiC0001 Surfaces. - Acta Physica Polonica A, 2012, Vol. 122, iss. 6, s. 1045-1048
- [współaut.] Bercha D, Glukhov K Gain spectrum for the In4Se3 crystal with a con-standard dispersion law of charge carriers. - Acta Physica Polonica A, 2011, Vol. 119, nr 5, s. 720-722
- [współaut.] Bercha D, Glukhov K Non-standard anisotropy of the energy spectrum of a layered TlGaSe2 crystal. - Physica Status Solidi (B): Basic Research, 2011, Vol. 148, no 6, s. 1446-1452
- [współaut.] Glukhov K, Kharkhalis L Anisotropy of the physical parameters in the CdSb-ZnSb solid solutions. - Journal of Thermoelectricity, 2010, nr 2, s. 38-42
- [współaut.] Bercha D, Potera P, Khachapuridze A [et al.] Band structure and optical properties of the layered Hg3TeCl4 crystal. - Acta Physica Polonica A, 2009, vol. 116, nr 5, s. 950-951
- [współaut.] Kharkhalis L, Shenderovskii V, Bercha D Dispersion law with a low-energy non-parabolicity for the charge carriers in the In4Se3 crystal and related effects. - Acta Physica Polonica A, 2009, vol. 116, nr 5, s. 952-953
- Relation between the topology of the elementary energy bands in the valence band of the Hg3TeCl4 crystal and its anisotropy. - Physica Status Solidi (B): Basic Research, 2009, Vol. 246, iss. 1, s. 147 - 152
- [współaut.] Bercha D, Kharkhalis L The band structure of a layered Hg3TeCl4 crystal formed by energy states of HgCl2 and HgTe crystals. - Physica Status Solidi (B): Basic Research, 2008, vol. 245, iss. 8, s. 1571-1579
- [współaut.] Bercha D, Ruŝans'kij K, Slipukhina I Naslidki niz'koenergetičnoï neparaboličnosti zakoniv dispersiï dla fizičnih parametriv ta proâvu novih efektiv u sil'no anizotropnih kristalah. - Žurnal fizičnih doslidžen', 2008, T. 12, no. 4, 6 s.
- [współaut.] Bercha D, Glukhov K Elementary energy bands in the band structure of AIV, AIIIBv crystals and superlattices built upon them. - Physica Status Solidi (B): Basic Research, 2007, vol. 244, iss. 4, s. 1318-1336
- [współaut.] Bercha D, Kharkhalis L, Slipukhina I Elementary energy bands concept for IV-VI crystals with phase transitions. - Phase Transitions, 2007, Vol. 80, Iss. 1-2, s. 39-46
- [współaut.] Bercha D, Glukhov K, Slipukhina I Universality of the empty-lattice approximation to predict the topology of energy spectra of high-symmetry crystals and superlattices based upon them. - Acta Physica Polonica A, (2006), Vol. 110, nr 3, s. 369-378
- [współaut.] Obermayr W On LCAO positron wavefunctions in crystals. - Journal of Physics. Conference Series, (2006), Vol. 30, s. 262-265
- [współaut.] Rushchanskii K, Kharkhalis L, Bercha D Similarities of the band structure of In4Se3 and InSe under pressure and peculiarities of the creation of the band gap. - Physica Status Solidi (B): Basic Research, (2006), Vol. 243, nr 3, s. 592-609
- [współaut.] Bercha D, Kharkhalis L, Glukhov K Covalent bridges - an induced modification of the conduction band in layered crystals. - Physica Status Solidi (B): Basic Research, 2004, vol. 241, iss. 4, p. 845 - 855
- [współaut.] Bercha D, Rushchanskii K Elementary energy bands in band structure calculations of some wide-bandgap crystals. - Physica Status Solidi (A) Applications and Materials, 2004, vol. 201, iss. 2, p. 304-307
- [współaut.] Bercha D, Slipukhina I, Rushchanskii K Elementary energy bands in the band structure of the narrow-band-gap semiconductor CdSb. - Physical Review B, 2004, vol. 70, iss. 23, s. 1-8
- [współaut.] Bercha D, Tovstyuk C Localized functions and the elementary energy bands in crystals with strongly anisotropic structure W: Symmetry and structural properties of condensed matter : proceedings of the 7th International School on Theoretical Physics, Myczkowce, Poland 11-18 September 2002 / eds. Tadeusz Lulek, Barbara Lulek, Andrzej Wal. New Jersey, World Scientific: 2003, S. 345-351
- [współaut.] Bercha D, Kharkhalis L One-electron states in a layered crystal with covalent bridges. - Physica Status Solidi (B): Basic Research, 2002, vol. 229, iss. 3, s. 1371-1396
- [współaut.] Bercha D, Rushchanskii K, Matkovskyy A [et al.] Elementary energy bands in ab initio calculations of the YAlO3 and SbSI crystal band structure. - Physical Review B, 2002, Vol. 66, iss. 19, art. no. 195203 (9 s.)
- [współaut.] Bercha D Prawa dyspersji, gęstość stanów i ich odzwierciedlenie w wybranych własnościach fizycznych kryształów warstwowych / Małgorzata Sznajder ; prom. Dariâ Berča. Rzeszów, Uniwersytet Rzeszowski. Wydział Matematyczno-Przyrodniczy. Instytut Fizyki: 2001, 169 k.