Dr inż. Dawid Jarosz

Publikacje

• [współaut.] Bobko E, Stachowicz M, Przeździecka E [et al.] Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates. - Surface Science, 2025, Vol. 751
• [współaut.] Bobko E, Trzyna-Sowa M, Przeździecka E [et al.] Optimization of MBE-grown GaSb bufer on GaAs substrates for infrared detectors. - Opto-Electronics Review, 2024, Vol. 32, iss. 4
• [współaut.] Marchewka M, Pasternak M, Juś A [et al.] Interfaces-engineered M-structure for infrared detectors. - Opto-Electronics Review, 2024, Vol. 32, iss. 2, p. 1-9
• [współaut.] Adhikari A, Wierzbicka A, Adamus Z [et al.] Correlated carrier transport and optical phenomena in CdO layers grown by plasma-assisted molecular beam epitaxy technique. - Thin Solid Films, 2023, Vol. 780
• [współaut.] Marchewka M, Pasternak M, Juś A [et al.] Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy. - Materials, 2023, Vol. 16, iss. 5
• [współaut.] Stachowicz M, Krzemiński P, Pasternak M [et al.] Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor. - ACS Omega, 2023, Vol. 8, iss. 36
• [współaut.] Ciura &, Śliż P, Krzemiński P [et al.] Evaluation of Metal-Semiconductor Contact Quality : correlation of 1/f Noise and Nonlinearity. - IEEE Transactions on Electron Devices, 2022, Vol. 69, iss. 12, p. 6999-7004
• [współaut.] Ciura &, Śliż P, Krzemiński P [et al.] Low Frequency Noise Properties of InAs/GaSb Superlattice. - Acta Physica Polonica A, 2022, Vol. 142, iss. 5, s. 621-624
• [współaut.] Przeździecka E, Paradowska K, Jakieła R [et al.] Polar and Non-Polar Zn_1-xMg_xO:Sb Grown by MBE. - Materials, 2022, Vol. 15, iss. 23
• [współaut.] Andrzejewski J, Pietrzyk M, Kozanecki A Optical Measurements and Theoretical Modelling of Excitons in Double ZnO/ZnMgO Quantum Wells in an Internal Electric Field. - Materials, 2021, Vol. 14, iss. 23